Extended CAR resist capabilities demonstrated to support High NA EUV patterning beyond 2nm

As the semiconductor industry moves beyond the 2nm era, advanced lithography and patterning techniques are becoming increasingly important to continue shrinking chip features and improving performance.

In a recent breakthrough, presented at the 2026 SPIE Photomask Technology + EUV Lithography Conference, imec and its ecosystem partners demonstrated that chemically amplified resists (CARs), a well-established class of lithography materials, can support High NA EUV lithography for the fabrication of extremely dense logic structures.

The researchers successfully patterned features with pitches down to 22nm using a single High NA EUV exposure step, demonstrating the continued potential of CAR-based processes for future A14 and A10 technology nodes.

The results were achieved through close collaboration between imec, ASML, material suppliers, and the broader patterning ecosystem, combining advances in lithography, materials, and etching techniques.

For the NanoIC pilot line, such developments are particularly significant, as High NA EUV is a key technology for enabling future systems-on-chip beyond 2nm.

Want to find out more about how this CAR technology is being extended for High NA EUV lithography?

Read the full press release on the imec website