Important High NA EUV test results presented by imec

Thanks to its unprecedented precision, High NA EUV lithography is essential towards continued device scaling. Its enablement is therefore a key focus of the NanoIC pilot line.

An important milestone towards the validation of High NA EUV and its surrounding ecosystem was presented by imec at SPIE Advanced Lithography + Patterning. The research hub and host of the NanoIC pilot line announced the first electrical test (e-test) results obtained on 20nm pitch metal line structures patterned after single-exposure High NA EUV lithography.

The measurements showed good electrical yield, which indicates few stochastic defects. This confirms the patterning capabilities of High NA Lithography at such a small dimension.

Read the imec press release